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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3039
DESCRIPTION With TO-220C package High breakdown voltage (VCBOY 500V). Fast switching speed. Wide area of safe operation APPLICATIONS 400V/7A switching regulator applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB
Collector-base voltage

PARAMETER
CHA IN
Base current Collector dissipation
Collector-emitter voltage
Emitter-base voltage
ES NG
Open emitter
Open base
MIC E
CONDITIONS
OND
TOR UC
VALUE 500 400 7 7 14 3
UNIT V V V A A A
Open collector
Collector current (DC) Collector current-peak
Ta=25ae PC TC=25ae Tj Tstg Junction temperature Storage temperature
1.75 W 50 150 -50~150 ae ae
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=5mA ;RBE= IC=1mA; IE=0 IE=1mA; IC=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=400V ;IE=0 VEB=5V; IC=0 IC=0.8A ; VCE=5V IC=4A ; VCE=5V IC=0.8A ; VCE=10V 15 8 MIN 400 500 7 TYP.
2SC3039
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT Cob
MAX
UNIT V V V
1.0 1.5 10 10 50 |I |I
V V A A
Switching times ton ts tf
Collector output capacitance

CHA IN
Turn-on time Storage time Fall time
E SEM NG
f=1MHz ; VCB=10V
OND IC
TOR UC
20 80 1.0 2.5 1.0
MHz pF
|I |I |I
s s s
IC=5A, IB1=1A IB2=-1A; VCC=200V RL=40|
hFE-1 classifications L 15-30 M 20-40 N 30-50
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3039

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3039

CHA IN
E SEM NG
OND IC
TOR UC
4


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